セリアスラリーによる酸化膜の平坦化CMPに関する基礎的検討

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  • セリアスラリー ニ ヨル サンカ マク ノ ヘイタンカ CMP ニ カンスル キソテキ ケントウ

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In this study, ceria slurries (CeOz) for oxide fIlms are applied for planarization CMP for high performance and high-grade polishing. The investigation on ceria slurry focused on calcination temperature was carried out. Polishing characteristics of oxide mms to disperse ceria particles, which is necessary to make ceria slurry work efficiently, were found. The results indicate that the dispersibility and the removal rate of ceria slurry are affected by pH and the additive rate, and in particular, the removal rate is on the decrease especially by adding the additives.

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