Effect on crystal structure and the dielectric properties of HfO<sub>2</sub>:Y/Si films by oxygen partial pressure during deposition
-
- Saho Yuki
- Osaka Pref Univ.
-
- Takada Kenshi
- Osaka Pref Univ.
-
- Yoshimura Takeshi
- Osaka Pref Univ.
-
- Fujimura Norifumi
- Osaka Pref Univ.
Bibliographic Information
- Other Title
-
- 成長時の酸素分圧がHfO<sub>2</sub>:Y/Si薄膜の結晶構造や誘電特性に及ぼす影響
Journal
-
- JSAP Annual Meetings Extended Abstracts
-
JSAP Annual Meetings Extended Abstracts 2020.1 (0), 1223-1223, 2020-02-28
The Japan Society of Applied Physics
- Tweet
Details 詳細情報について
-
- CRID
- 1390292240175063168
-
- ISSN
- 24367613
-
- Text Lang
- ja
-
- Data Source
-
- JaLC