Enhancement of ON/OFF ratio of nonvolatile memory characteristics using GaN/AlN resonant tunneling diodes
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- Nagase Masanori
- AIST
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- Takahashi Tokio
- AIST
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- Shimizu Mitsuaki
- AIST
Bibliographic Information
- Other Title
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- GaN/AlN共鳴トンネルダイオードを用いた不揮発メモリ特性のON/OFF比増大
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2021.1 (0), 2567-2567, 2021-02-26
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390292472565563520
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC