Electrical properties of Si-doped AlN prepared on sapphire by sputtering
-
- Sakurai Yuya
- IIS, the Univ. of Tokyo
-
- Ueno Kohei
- IIS, the Univ. of Tokyo
-
- Kobayashi Atsushi
- IIS, the Univ. of Tokyo
-
- Uesugi Kenjiro
- Mie Univ.
-
- Miyake Hideto
- Mie Univ.
-
- Fujioka Hiroshi
- IIS, the Univ. of Tokyo JST-ACCEL
Bibliographic Information
- Other Title
-
- スパッタ法により形成したサファイア上SiドープAlNの電気特性
Journal
-
- JSAP Annual Meetings Extended Abstracts
-
JSAP Annual Meetings Extended Abstracts 2019.1 (0), 3187-3187, 2019-02-25
The Japan Society of Applied Physics
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390293202186102784
-
- ISSN
- 24367613
-
- Text Lang
- ja
-
- Data Source
-
- JaLC