Application of PSD-grown heavily doped GaN for tunnel junction devices
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- Fudetani Taiga
- IIS, UTokyo
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- Ueno Kohei
- IIS, UTokyo
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- Kobayashi Atsushi
- IIS, UTokyo
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- Fujioka Hiroshi
- IIS, UTokyo JST-ACCEL
Bibliographic Information
- Other Title
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- PSD成長した高濃度不純物添加GaNのトンネル接合への応用
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2018.2 (0), 3254-3254, 2018-09-05
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390293434338562944
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC