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Surface morphology of 4H - SiC wafer after etching using ClF<sub>3</sub> gas
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- okuyama shogo
- Yokohama Nat. Univ.
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- Habuka Hitoshi
- Yokohama Nat. Univ.
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- Takahasi Yoshinao
- Kanto Denka Kogyo
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- Kato Tomohisa
- AIST
Bibliographic Information
- Other Title
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- 三フッ化塩素ガスによるエッチング後の4H-SiCウエハ表面形態
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2017.2 (0), 3516-3516, 2017-08-25
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390293943110528000
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC
