Effect of Ge growth temperature and growth rate on Ge dots formation using surface reconstruction through Si-C binding
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- Satoh Yuhki
- Tohoku Univ.
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- Itoh Yuhki
- Tohoku Univ.
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- Kawashima Tomoyuki
- Tohoku Univ.
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- Washio Katsuyoshi
- Tohoku Univ.
Bibliographic Information
- Other Title
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- Si-C結合による表面再構成を用いたGeドット形成におけるGe堆積温度と堆積速度の影響に関する検討
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2015.2 (0), 3187-3187, 2015-08-31
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390295823372847232
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC