Degradation Mechanism of Bistability Characteristics of GaN/AlN Resonant Tunneling Diodes
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- Nagase Masanori
- AIST
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- Takahashi Tokio
- AIST
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- Shimizu Mitsuaki
- AIST
Bibliographic Information
- Other Title
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- GaN/AlN共鳴トンネルダイオードで生じる双安定性の劣化メカニズム
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2015.1 (0), 3053-3053, 2015-02-26
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390296066524767232
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC