GaN-on-Si Heteroepitaxial Growth and Power Device

DOI

Bibliographic Information

Other Title
  • Si基板上の窒化物半導体結晶成長及びパワーデバイス

Abstract

AlGaN/GaN HEMTs on Si are excellent candidates for low-loss and high power switching applications because of its electronic properties and availability of large sized Si substrate at low cost. The limiting factors for high quality GaN-on-Si are large lattice and thermal expansion-coefficient mismatches between GaN and Si, which leads to high dislocation densities, wafer bowing and crack formation. High-quality GaN layer has been grown on Si using high-temperature-grown AlN initial layer and strained layer superlattice by MOCVD technique. The heteroepitaxial growth of GaN-on-Si contributes to AlGaN/GaN power and RF devices.

Keywords

Details 詳細情報について

Report a problem

Back to top