書誌事項
- タイトル別名
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- Boron-Implanted Termination Structures for Vertical GaN Power Devices with Highly Enhanced Breakdown Voltage
抄録
<p>We propose a new edge termination technique for high-voltage vertical GaN power devices using boron-ion implantation into a p-GaN epitaxial layer. The boron-implanted layer after annealing at 800°C results in a half-conductive p-type layer that is applicable to junction termination extension (JTE). The maximum breakdown voltage of 1400 V was near an ideal value for the donor concentration in the drift layer. High avalanche current immunity was observed for the optimal structure. In wafer-scale fabrication of the p-n diodes on a 4-inch free-standing GaN substrate, good reverse characteristics are observed across the wafer. The proposed JTE technique has high potential for wafer-scale fabrication of robust and highly efficient vertical GaN devices.</p>
収録刊行物
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- 電気学会論文誌C(電子・情報・システム部門誌)
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電気学会論文誌C(電子・情報・システム部門誌) 144 (3), 251-256, 2024-03-01
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390299318867562752
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- ISSN
- 13488155
- 03854221
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
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- 抄録ライセンスフラグ
- 使用不可