Development of Low On-Resistance and Low Reverse Recovery Charge Power MOSFET for Large-Capacity Communication Systems
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- Kaneko Atsushi
- Toshiba Electronic Devices & Storage Corporation
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- Kachi Tsuyoshi
- Toshiba Electronic Devices & Storage Corporation
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- Kaganoi Keisuke
- Toshiba Electronic Devices & Storage Corporation
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- Nishiwaki Tatsuya
- Toshiba Electronic Devices & Storage Corporation
Bibliographic Information
- Other Title
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- 大容量通信システムに向けた低抵抗・低逆回復電荷パワーMOSFETの開発
Abstract
<p>This paper proposes a low on-resistance and low reverse recovery charge Power MOSFET Technologies for large-capacity communication systems. We have developed 150 V class power metal-oxide-semiconductor field-effect transistor (MOSFET) products featuring low on-resistance, gate charge, and reverse recovery charge characteristics by deep trench field plate technology and lifetime control technique. On-resistance reduced by 44% and reverse recovery charge reduced by 74% compared to the previous generation product. The device achieved peak power conversion efficiency of 94.6%.</p>
Journal
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- IEEJ Transactions on Electronics, Information and Systems
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IEEJ Transactions on Electronics, Information and Systems 144 (3), 263-266, 2024-03-01
The Institute of Electrical Engineers of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390299318867595392
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- ISSN
- 13488155
- 03854221
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- Text Lang
- ja
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- Data Source
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- JaLC
- Crossref
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- Abstract License Flag
- Disallowed