書誌事項
- タイトル別名
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- Development of Low On-Resistance and Low Reverse Recovery Charge Power MOSFET for Large-Capacity Communication Systems
説明
<p>This paper proposes a low on-resistance and low reverse recovery charge Power MOSFET Technologies for large-capacity communication systems. We have developed 150 V class power metal-oxide-semiconductor field-effect transistor (MOSFET) products featuring low on-resistance, gate charge, and reverse recovery charge characteristics by deep trench field plate technology and lifetime control technique. On-resistance reduced by 44% and reverse recovery charge reduced by 74% compared to the previous generation product. The device achieved peak power conversion efficiency of 94.6%.</p>
収録刊行物
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- 電気学会論文誌C(電子・情報・システム部門誌)
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電気学会論文誌C(電子・情報・システム部門誌) 144 (3), 263-266, 2024-03-01
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390299318867595392
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- ISSN
- 13488155
- 03854221
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
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- 抄録ライセンスフラグ
- 使用不可