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Analysis of Surge Voltage during Turn-Off Switching of IGBTs
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- Fujimoto Yuri
- Kyushu University
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- Nishizawa Shin-ichi
- Kyushu University
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- Saito Wataru
- Kyushu University
Bibliographic Information
- Other Title
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- IGBTターンオフスイッチングにおけるサージ電圧解析
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Description
<p>Surge voltage at IGBT turn-off switching was analyzed with dependence on cell design parameters. Although drift layer thinning is effective to improve trade-off characteristics between turn-off loss Eoff and on-state voltage Von, voltage surge is induced due to quick expanding depletion layer. Therefore, the surge voltage Vsurge has also trade-off relationship with the Von at the same Eoff condition. The origin of voltage surge was analyzed using TCAD simulation, and total amount of remained hole in the drift layer during turn-off switching is a key factor for the Vsurge. Narrow mesa structure and thick buffer layer are effective for improvement of trade-off characteristics between Vsurge and Von.</p>
Journal
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- IEEJ Transactions on Electronics, Information and Systems
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IEEJ Transactions on Electronics, Information and Systems 144 (3), 198-203, 2024-03-01
The Institute of Electrical Engineers of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390299318867611648
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- ISSN
- 13488155
- 03854221
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- Text Lang
- ja
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- Data Source
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- JaLC
- Crossref
- OpenAIRE
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- Abstract License Flag
- Disallowed