書誌事項
- タイトル別名
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- Analysis of Surge Voltage during Turn-Off Switching of IGBTs
説明
<p>Surge voltage at IGBT turn-off switching was analyzed with dependence on cell design parameters. Although drift layer thinning is effective to improve trade-off characteristics between turn-off loss Eoff and on-state voltage Von, voltage surge is induced due to quick expanding depletion layer. Therefore, the surge voltage Vsurge has also trade-off relationship with the Von at the same Eoff condition. The origin of voltage surge was analyzed using TCAD simulation, and total amount of remained hole in the drift layer during turn-off switching is a key factor for the Vsurge. Narrow mesa structure and thick buffer layer are effective for improvement of trade-off characteristics between Vsurge and Von.</p>
収録刊行物
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- 電気学会論文誌Ｃ（電子・情報・システム部門誌）
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電気学会論文誌Ｃ（電子・情報・システム部門誌） 144 (3), 198-203, 2024-03-01
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390299318867611648
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- ISSN
- 13488155
- 03854221
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
- OpenAIRE
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- 抄録ライセンスフラグ
- 使用不可