150GHz Fundamental Oscillator Utilizing Transmission-Line-Based Inter-Stage Matching in 130nm SiGe BiCMOS Technology

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  • KANO Sota
    Department of Electrical Engineering and Information Systems, The University of Tokyo
  • IIZUKA Tetsuya
    Department of Electrical Engineering and Information Systems, The University of Tokyo Systems Design Lab, School of Engineering, The University of Tokyo

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<p>A 150GHz fundamental oscillator employing an inter-stage matching network based on a transmission line is presented in this letter. The proposed oscillator consists of a two-stage common-emitter amplifier loop, whose inter-stage connections are optimized to meet the oscillation condition. The oscillator is designed in a 130-nm SiGe BiCMOS process that offers fT and fMAX of 350GHz and 450GHz. According to simulation results, an output power of 3.17dBm is achieved at 147.6GHz with phase noise of -115dBc/Hz at 10MHz offset and figure-of-merit (FoM) of -180dBc/Hz.</p>

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