垂直ブリッジマン法<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>バルク単結晶成長
書誌事項
- タイトル別名
-
- <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Single Crystal Growth by the Vertical Bridgman Method
抄録
<p>β-Ga2O3 single crystal growth by the vertical Bridgman method using a platinum-rhodium alloy crucible in ambient air was studied. 2-inch diameter β-Ga2O3 single crystals with the growth direction perpendicular to (100), (010) and (001) planes were grown and machined wafers with each plane were produced. Large sized crystals with 3-inch and 4-inch diameter have been successfully grown by the same technique.</p>
収録刊行物
-
- 日本結晶成長学会誌
-
日本結晶成長学会誌 48 (3), n/a-, 2021
日本結晶成長学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390571395582855552
-
- NII論文ID
- 130008110710
-
- ISSN
- 21878366
- 03856275
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可