垂直ブリッジマン法<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>バルク単結晶成長

DOI

書誌事項

タイトル別名
  • <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Single Crystal Growth by the Vertical Bridgman Method

抄録

<p>β-Ga2O3 single crystal growth by the vertical Bridgman method using a platinum-rhodium alloy crucible in ambient air was studied. 2-inch diameter β-Ga2O3 single crystals with the growth direction perpendicular to (100), (010) and (001) planes were grown and machined wafers with each plane were produced. Large sized crystals with 3-inch and 4-inch diameter have been successfully grown by the same technique.</p>

収録刊行物

詳細情報 詳細情報について

  • CRID
    1390571395582855552
  • NII論文ID
    130008110710
  • DOI
    10.19009/jjacg.48-3-07
  • ISSN
    21878366
    03856275
  • 本文言語コード
    ja
  • データソース種別
    • JaLC
    • CiNii Articles
  • 抄録ライセンスフラグ
    使用不可

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