Dependence of C-AXIS Orientation for AIN and ZnO Films on Substrate Temperature and Gas Pressure in Magnetron Sputtering

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  • マグネトロン スパッタホウ ニ ヨル AlN オヨビ ZnO マク ノ Cジク
  • マグネトロンスパッタ法によるA1N及びZnO膜のC軸配向性の基盤温度とガス圧依存性

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AlN and ZnO films with high c-axis orientation of the crystallites perpendicular to the film plane have been deposited using a DC planar magnetron type of reactive sputtering. For AlN films, the deviation angle in the rocking curve of (002) plane depended mainly on the energy of sputtered particles with high energy at low working gas pressure. On the other hand, for ZnO films, the deviation angle depended strongly on the substrate temperature because the energy of sputtered particles passing through the ambient gas with diffusion at high working gas pressure was rather low. The degree in c-axis orientation of films depended on the total energy corresponding to both the energy of sputtered particles and the temperature of the substrate surface.

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