Furnace Annealing Behavior of B-doped Poly-SiGe Formed on Insulating Film

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  • Tsunoda Isao
    Department of Electronics, Graduate School of Information Science and Electrical Engineering, Kyushu University : Graduate Student
  • Sadoh Taizoh
    Department of Electronics, Faculty of Information Science and Electrical Engineering, Kyushu University
  • Miyao Masanobu
    Department of Electronics, Faculty of Information Science and Electrical Engineering, Kyushu University

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  • Furnace Annealing Behavior of B-deped Poly-SiGe Formed on Insulating Film

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Abstract

Furnace-annealing behavior of B-doped poly-SiGe on insulating films has been investigated. With increasing Ge fraction, thermal stability of electrically active B atoms at a supersaturated concentration was significantly improved, for example, the stability at 800℃ for poly-Si_<0.6>Ge_<0.4> films was nine times as high as that for poly-Si films. The deactivation process consists of the fast and slow processes. The fast process was due to sweeping out of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth by annealing. The improved thermal stability of B atoms is due to the local strain compensation by Ge doping.

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