書誌事項
- タイトル別名
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- Silicon Subsurface Evaluation with Contact Potential Difference
- セッショク デンイサ ニ ヨル Si ウェーハ ヒョウメンソウ ヒョウカ
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説明
Non-contacting evaluation method using contact potential difference is developed for evaluating subsurface property of silicon wafers. Measured contact differences for n-and ptype silicon crystals were well corresponding to that calculated. Positively and negatively charged surfaces of silicon wafers caused positive and negative contact potentiai difference, respectively. Contact potential differences well reflected damage induced in 200nm depth due to H2 + ion implantation. Contact potential differences reflected microroughness and damage induced by chemomechanical polishing. Influence of Mo and Fe contaminant introduced into epilayer of epitaxial Si wafers was detected to change contact potential difference. Finally, we conclude that contact potential difference measurements enable to revel crystalline property in silicon subsurface.
収録刊行物
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- 神奈川工科大学研究報告.B,理工学編
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神奈川工科大学研究報告.B,理工学編 27 13-18, 2003-03-20
神奈川工科大学
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詳細情報 詳細情報について
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- CRID
- 1390572174813744256
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- NII論文ID
- 120001086340
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- NII書誌ID
- AN10074179
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- HANDLE
- 10368/933
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- NDL書誌ID
- 6529874
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- ISSN
- 09161902
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- IRDB
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用可