Improvement of blister-resistance of Mo/Si multilayers by capping layer attached via intermediate layer

DOI IR (HANDLE) Open Access

Bibliographic Information

Other Title
  • 中間層による保護膜付きMo/Si多層膜のブリスタ耐性の改善

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Description

Mo/Si multilayer mirrors are used for extreme ultraviolet (EUV) lithography. The formation of hydrogen-induced blister in the Mo/Si multilayer is a problem that reduces the reflectance of the mirror. In this study, the blister-resistance of Mo/Si multilayer mirror samples with multiple materials of intermediate layers as thin as 1 nm between the capping layer and the multilayer was investigated using a high-frequency hydrogen plasma system as a hydrogen ion source. As a result, it was observed that the intermediate layer suppressed the blister formation. Furthermore, intermediate layer materials that can suppress blister formation and materials that cannot suppress blister formation were observed, and investigation has shown that the blister-resistance is greatly affected by the properties of the multilayer interface.

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Details 詳細情報について

  • CRID
    1390573242461754496
  • NII Article ID
    120007193386
  • NII Book ID
    AA1147319X
  • DOI
    10.15017/4763151
  • HANDLE
    2324/4763151
  • Text Lang
    ja
  • Article Type
    departmental bulletin paper
  • Data Source
    • JaLC
    • IRDB
    • CiNii Articles
  • Abstract License Flag
    Allowed

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