Comparison of Gate Bias Characteristics of MOSFETs at High TID
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- Yoshida Ryoichiro
- Tokyo Tech
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- Kimura Arisa
- Tokyo Tech
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- Ando Motoki
- Tokyo Tech
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- Oshima Yuta
- Tokyo Tech
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- Nabeya Shinsuke
- Tokyo Tech
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- Hirakawa Kenji
- Tokyo Tech
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- Iwase Masayuki
- Tokyo Tech
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- Ogasawara Munehiro
- Tokyo Tech
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- Yoda Takashi
- Tokyo Tech
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- Ishihara Noboru
- Tokyo Tech
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- Ito Hiroyuki
- Tokyo Tech
Bibliographic Information
- Other Title
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- 高累積線量におけるMOSFETのゲートバイアス特性比較
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2020.2 (0), 311-311, 2020-08-26
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390573407661599104
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC