書誌事項
- タイトル別名
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- Analysis of Switching Noise Mechanism and Proposal of Improvement Measures Focused on Capacitance-Voltage Characteristics of Superjunction-MOSFET
抄録
<p>The switching noise mechanism of a high voltage superjunction-MOSFET loaded into a power supply is analyzed. The device model is developed using BSIM3 MOSFET model with voltage-dependent capacitors. Inductive load switching with test-circuit parasitic elements is simulated, and the switching surge generated during turn-off transient is discussed. A sharp drop of drain-source capacitance (Cds at the turn-off transient causes high voltage ringing, whose frequency is determined using total capacitances and stray inductances in the power loop circuit. The optimization of Cds-voltage characteristic and additional Cgs with small capacitance are proposed as an effective method for suppressing surge generation. The voltage ringing level is improved by slightly modifying the Cds-voltage curve and additional Cgs. In addition, test results show that the radiated EMI decreased.</p>
収録刊行物
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- 電気学会論文誌Ｄ（産業応用部門誌）
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電気学会論文誌Ｄ（産業応用部門誌） 142 (10), 721-728, 2022-10-01
一般社団法人 電気学会
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キーワード
詳細情報 詳細情報について
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- CRID
- 1390575108414271104
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- ISSN
- 13488163
- 09136339
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
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- 抄録ライセンスフラグ
- 使用不可