Low-damage etching of n-GaN surface utilizing photoelectrochemical reactions
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- Matsumoto Satoru
- RCIQE, Hokkaido Univ.
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- Sato Taketomo
- RCIQE, Hokkaido Univ.
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- Narita Tetsuo
- Toyota Central R&D Labs.,Inc. IMaSS, Nagoya Univ.
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- Kachi Tetsu
- IMaSS, Nagoya Univ.
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- Hashizume Tamotsu
- RCIQE, Hokkaido Univ. IMaSS, Nagoya Univ.
Bibliographic Information
- Other Title
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- 光電気化学反応を利用したn-GaN表面層の低損傷エッチング
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2017.2 (0), 3073-3073, 2017-08-25
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390575418086794752
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC