Formation of SiO₂ Scale in High-Temperature Oxidation of Wsi₂
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説明
In order to clarify the relationship between evaporation of WO₃ and formation of a SiO₂ scale in WSi₂, high temperature oxidation tests of WSi₂ were carried out at the temperature range from 773 to 1773 K in air. The pronounced effect of the evaporation of WO₃ on the structure of oxide scale was found at temperatures higher than 1273 K, and a protective SiO₂ scale was formed above 1573 K. The requisite evaporation rate and the vapor pressure of WO₃ for the formation of a protective SiO₂ scale were estimated to be about 10⁻⁴kgm⁻²s⁻¹ and 10 Pa, respectively.
収録刊行物
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- Transactions of JWRI
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Transactions of JWRI 36 (2), 51-55, 2007-12
大阪大学接合科学研究所
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詳細情報 詳細情報について
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- CRID
- 1390575727755410176
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- NII論文ID
- 120004837968
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- NII書誌ID
- AA00867058
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- DOI
- 10.18910/3766
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- HANDLE
- 11094/3766
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- ISSN
- 03874508
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- 本文言語コード
- en
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- 資料種別
- departmental bulletin paper
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- データソース種別
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- JaLC
- IRDB
- CiNii Articles
- OpenAIRE
