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- 中山 英典
- 三菱ケミカル（株） スペシャリティマテリアルズビジネスグループ
書誌事項
- タイトル別名
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- Organic Photodiode Materials for Near-Infrared and Short-Wave Infrared Light Detection
説明
<p>We report on new materials for solution-processable organic photodiodes (OPDs) for near-infrared (NIR) and short-wave infrared (SWIR) detection compatible with CMOS image sensors. We selected a conventional structure (p-i-n) with a polymeric hole transport layer (HTL) that we originally made for organic light-emitting diodes. The HTL is free from acids and dopants, contributing to excellent device stability. The average roughness of the HTL on a 8-inch SiO2/Si wafer is less than 3 nm. For infrared sensing materials in the active layer, we developed novel non-fullerene acceptors (NFAs). An OPD targeting 940 nm achieved an external quantum yield (EQE) of 80% at the wavelength with a dark current in the order of 1×10－6 mA/cm－2 at －5 V. Another OPD targeting SWIR achieved EQE of 45％ at 1,100 nm with a dark current of 4×10－5 mA/cm－2 at －5 V. Novel NFAs targeting even longer wavelengths are under development.</p>
収録刊行物
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- 高分子
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高分子 73 (2), 67-68, 2024
公益社団法人 高分子学会
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キーワード
詳細情報 詳細情報について
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- CRID
- 1390581854541488384
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- ISSN
- 21859825
- 04541138
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
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- 抄録ライセンスフラグ
- 使用不可