Prospects and challenges of Ge device technology

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  • TORIUMI Akira
    Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo

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  • Ge-MOSFETの可能性と課題
  • Ge MOSFET ノ カノウセイ ト カダイ

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Abstract

<p>The Ge device is one of the post-Si device candidates. Historically, Ge research started earlier than Si one, but the present society is constructed of Si technology. Why is Ge required again, what are the challenges, and what is the present status? The most important issue of Ge technology is the interface control, including insulator/Ge and metal/Ge, which are very fundamental issues of semiconductor technology, but very different from those of Si. In this paper we introduce the results obtained to date in our group.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 75 (12), 1453-1460, 2006-12-10

    The Japan Society of Applied Physics

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