Simultaneous Observation of Si Oxidation Rate and Oxidation-induced Strain Using XPS

DOI Web Site Web Site 15 References Open Access

Bibliographic Information

Other Title
  • 光電子分光法によるSi表面酸化プロセス反応速度と酸化誘起歪みの同時観察
  • コウデンシ ブンコウホウ ニ ヨル Si ヒョウメン サンカ プロセス ハンノウ ソクド ト サンカ ユウキ ヒズミ ノ ドウジ カンサツ

Search this article

Abstract

<p>Thermal oxidation of Si substrate is an indispensable process for the Si device fabrication. However, as the required SiO2 film thickness becomes thinner, the influence of oxidation induced strain cannot be ignored. We adopted real-time photoelectron spectroscopy using synchrotron radiation as a method to measure simultaneously the oxidation induced strain and oxidation rate at the same place. Strain causes a photoelectron spectral shift of the inner shell, so we qualitatively estimated the strain from the shift amount. Using the spectral shifts, we found that there is a correlation between the strain and the SiO2/Si interface oxidation reaction rate. It also revealed that the interfacial oxidation accelerating effect is also obtained by thermal strain due to rapid temperature rise. These results can be explained by our proposed model in which point defects caused by strain become reaction sites at the SiO2/Si interface.</p>

Journal

  • Vacuum and Surface Science

    Vacuum and Surface Science 62 (6), 350-355, 2019-06-10

    The Japan Society of Vacuum and Surface Science

References(15)*help

See more

Related Projects

See more

Keywords

Details 詳細情報について

Report a problem

Back to top