Study of Reversal Contrast Phenomenon in SEM Images at Low Incident Accelerating Voltage by AES

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  • 極低入射電圧SEM像におけるコントラスト反転現象の解明
  • ゴクテイ ニュウシャ デンアツ SEMゾウ ニ オケル コントラスト ハンテン ゲンショウ ノ カイメイ

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<p>Recently it has become possible for SEM to obtain a backscattered electron image (BEI) at low incident voltages of 1 kV or less. However, it was reported that some brightness in the BEI acquired at low incident voltages was not always proportional to the average atomic number of the sample. In this study, we investigated contrast reversal phenomena of two elements (C and Au) in BEIs using backscattered electrons acquired by Auger electron spectroscopy (AES) at an incident voltage of about 1 kV.</p>

Journal

  • Vacuum and Surface Science

    Vacuum and Surface Science 63 (6), 294-297, 2020-06-10

    The Japan Society of Vacuum and Surface Science

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