DRY ETCHING OF GERMANIUM WAVEGUIDES BY USING CHF_3 INDUCTIVELY COUPLED PLASMA

DOI IR (HANDLE) Open Access
  • Idris A. S.
    Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
  • Jiang H.
    Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
  • Hamamoto Kiichi
    Interdisciplinary Graduate School of Engineering Sciences, Kyushu University

Description

A dry etching procedure to etch germanium in a CHF3 inductively coupled plasma (ICP) using a polymer based photoresist mask was developed to obtain a high selectivity ratio as well as to obtain a near vertical anisotropic sidewall etch profile. In this study, a sidewall angle of 85° with an etch rate of 190 nm/min was obtained through optimization of the ICP bias power to fabricate germanium waveguide structures with no under-cut.

Journal

Details 詳細情報について

  • CRID
    1390853649777299328
  • NII Article ID
    120006654736
  • DOI
    10.15017/1809224
  • ISSN
    24341436
  • HANDLE
    2324/1809224
  • Text Lang
    en
  • Article Type
    conference paper
  • Data Source
    • JaLC
    • IRDB
    • CiNii Articles
  • Abstract License Flag
    Allowed

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