To where do silicon atoms go? Still mysterious thermal oxidation

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  • KAGESHIMA Hiroyuki
    Graduate School of Natural Science and Technology, Shimane University
  • AKIYAMA Toru
    Graduate School of Engineering, Mie University
  • SHIRAISHI Kenji
    Institute of Materials and Systems for Sustainability, Nagoya University Graduate School of Engineering, Nagoya University
  • UEMATSU Masashi
    (Former position) Graduate School of Science and Engineering, Keio University

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Other Title
  • シリコン原子はどこへ行く？　まだまだ不思議な熱酸化
  • シリコン ゲンシ ワ ドコ エ ユク? マダマダ フシギ ナ ネツ サンカ

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Abstract

<p>The thermal oxidation process of Si consists of four processes: (1) diffusion of oxidizing molecules in the oxide film, (2) reaction of oxidizing molecules and Si at the interface, (3) generation and transport of interstitial Si atoms at the interface associated with the reaction, and (4) volume expansion, viscous flow and deformation of the oxidized region. Such complexity is not noticeable in the thermal oxidation of flat Si, and at first glance it seems that it can be easily understood only by (1) and (2). But in the thermal oxidation of Si three-dimensional nanostructures, the complexity is immediately revealed. We introduce the overall microscopic picture of thermal oxidation process mainly based on our research.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 91 (3), 155-159, 2022-03-01

    The Japan Society of Applied Physics

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