Epitaxial growth of In0.2 Ga0.8 Sb on Si (111) substrate using surface reconstruction control method
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- Igarashi Ren
- Univ. Toyama
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- Masayuki Mori
- Univ. Toyama
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- Koichi Maezawa
- Univ. Toyama
Bibliographic Information
- Other Title
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- 表面再構成制御法を用いたSi(111)基板上へのIn<sub>0.2</sub>Ga<sub>0.8</sub>Sbエピタキシャル成長
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2018.2 (0), 3233-3233, 2018-09-05
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390856384291980288
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC