Growth and characterization of high electron mobility n-type GaN prepared by PSD
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- Ueno Kohei
- IIS, The Univ. of Tokyo
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- Shibahara Keita
- IIS, The Univ. of Tokyo
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- Kobayashi Atsushi
- IIS, The Univ. of Tokyo
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- Fujioka Hiroshi
- IIS, The Univ. of Tokyo JST-ACCEL
Bibliographic Information
- Other Title
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- パルススパッタ堆積法による高電子移動度n型GaN薄膜の成長と評価
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2018.2 (0), 3252-3252, 2018-09-05
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390856384292059264
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC