High-Performance Epitaxial Graphene Device Using Yttrium Oxide Dielectric Layer
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- Suwa Kento
- RIEC, Tohoku Univ.
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- Endo Norifumi
- RIEC, Tohoku Univ.
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- Akiyama Shoji
- ShinEtsu Chemical
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- Tajima Keiichiro
- RIEC, Tohoku Univ.
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- Suemitsu Maki
- RIEC, Tohoku Univ.
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- Konishi Shigeru
- ShinEtsu Chemical
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- Mogi Hiroshi
- ShinEtsu Chemical
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- Kawai Makoto
- ShinEtsu Chemical
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- Kubota Yoshihiro
- ShinEtsu Chemical
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- Horiba Koji
- KEK
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- Fukidome Hirokazu
- RIEC, Tohoku Univ.
Bibliographic Information
- Other Title
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- 酸化イットリウム絶縁膜を用いた高性能エピタキシャルグラフェンデバイス
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2018.2 (0), 3696-3696, 2018-09-05
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390856384292449408
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC
