Defect Suppression by Polymer Additive in Si Microfabrication Using Metal Assisted Chemical Etching
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- SANO Mitsuo
- Corporate Manufacturing Engineering Center, Toshiba Corporation
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- OBATA Susumu
- Corporate Manufacturing Engineering Center, Toshiba Corporation
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- TAJIMA Takayuki
- Corporate Manufacturing Engineering Center, Toshiba Corporation
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- UKITA Yasunari
- Corporate Manufacturing Engineering Center, Toshiba Corporation
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- HIGUCHI Kazuhito
- Corporate Manufacturing Engineering Center, Toshiba Corporation
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- MATSUMOTO Ayumu
- Graduate School of Engineering, University of Hyogo
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- YAE Shinji
- Graduate School of Engineering, University of Hyogo
Bibliographic Information
- Other Title
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- 金属援用エッチングを用いたSiの微細加工における高分子添加剤による欠陥抑制
Abstract
We have developed a novel microfabrication technology applying Metal Assisted Chemical Etching. This technology makes it possible to chemically process the entire surface of Si wafer simultaneously with high productivity. When processing high aspect ratio trenches with this technology, it is important to suppress the generation of the fine-hole-shaped defects on the walls of trenches that reduce the strength of trenches. In this study, we estimated the model that the fine hole-shaped defects were caused by the Au atoms, and as a countermeasure, we added polymer additive that could inactivate Au diffusion region to the etching solution. As a result, polymer additive inhibited the dissolution of Si in Au diffusion region and suppressed the development of fine hole-shaped defects.
Journal
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- Journal of Smart Processing
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Journal of Smart Processing 11 (5), 239-245, 2022-09-10
Smart Processing Society for Materials, Environment & Energy (High Temperature Society of Japan)
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Details 詳細情報について
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- CRID
- 1390856583391174144
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- ISSN
- 21871337
- 2186702X
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- Text Lang
- ja
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- Data Source
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- JaLC
- Crossref
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- Abstract License Flag
- Disallowed