Deposition of Gold Nanostructured Films on Quartz Substrates by Pulsed Laser Ablation and Evaluation of Activated Chips Expressed Surface-Enhanced Raman Scattering by using 4-Mercaptobenzoic Acids
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- Kurumi Satoshi
- College of Science and Technology, Nihon University
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- Yoshino Wataru
- Graduate School of Science and Technology, Nihon University
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- Matsuda Ken-ichi
- College of Science and Technology, Nihon University
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- Suzuki Kaoru
- College of Science and Technology, Nihon University
Bibliographic Information
- Other Title
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- PLA法による石英基板上への金ナノ構造の作製と4-MBAを利用した表面増強ラマン散乱の評価
Description
<p>In this paper, we report on a one-step production method of gold nanostructured films for a surface-enhanced Raman scattering (SERS) chip, expected to be an advanced device for high-sensitive molecular detection, by a pulsed laser ablation method. Surface images, taken by atomic force microscopy, revealed that the gold nanostructured film on a SiO2 substrate have dome-shaped nanostructures. Pattern of x-ray diffraction of the gold nanostructured films showed existence of an Au(111) crystalline and intensity of it was increased with increment of the laser pulses from 5000 to 15000. Optical transmittance spectra of the gold nanostructured films on SiO2 showed that significant redshift of the absorption edge from 582 to 632 nm with increasing the number of the laser pulses. To evaluate the so-called enhancement factors of the SERS chips fabricated in this study, we measured SERS activation signals from the gold nanostructured films decorated with 4-mercaptobenzoic acids by a Raman spectroscopic system equipped with two different laser beams (532 and 785 nm). Using a 785 nm wavelength laser beam, the SERS activation signals were detected clearly from the gold nanostructured film produced with 15000 pulses. From that measurement, we approximately calculated the enhancement factor for that nanostructure as 1.4×105.</p>
Journal
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- IEEJ Transactions on Fundamentals and Materials
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IEEJ Transactions on Fundamentals and Materials 143 (1), 38-43, 2023-01-01
The Institute of Electrical Engineers of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390857593519111552
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- ISSN
- 13475533
- 03854205
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- Text Lang
- ja
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- Data Source
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- JaLC
- Crossref
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- Abstract License Flag
- Disallowed