Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar (000\overline{1}) p-type GaN grown by MOVPE
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- Nonoda Ryohei
- IMR, Tohoku Univ.
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- Shojiki Kanako
- IMR, Tohoku Univ.
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- Tanikawa Tomoyuki
- IMR, Tohoku Univ.
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- Kuboya Shigeyuki
- IMR, Tohoku Univ.
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- Katayama Ryuji
- IMR, Tohoku Univ.
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- Matsuoka Takashi
- IMR, Tohoku Univ.
Bibliographic Information
- Other Title
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- MOVPE成長N極性(000\overline{1})p型GaNの正孔濃度に与えるMg/Ga・V/III原料比の影響
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2015.2 (0), 3105-3105, 2015-08-31
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390858773326203520
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC