Thin-film Silicon Growth by Plasma-enhanced CVD : Gas-phase, Surface and In-film Reactions for High-quality Film Formation

DOI Web Site Web Site 23 References
  • NUNOMURA Shota
    National Institute of Advanced Industrial Science and Technology (AIST)
  • KONDO Michio
    National Institute of Advanced Industrial Science and Technology (AIST) Waseda University

Bibliographic Information

Other Title
  • プラズマCVD法によるシリコン系薄膜の成長：気相・表面・膜中の反応と薄膜の高品質化
  • プラズマ CVDホウ ニ ヨル シリコンケイ ハクマク ノ セイチョウ : キソウ ・ ヒョウメン ・ マク チュウ ノ ハンノウ ト ハクマク ノ コウヒンシツカ

Search this article

Abstract

<p>We overview plasma-enhanced chemical vaper deposition (PECVD) of high-quality thin-film silicon. In PECVD, such a film is grown by the deposition of precursors, which is generated by the gas-phase reactions of source gases in plasma. The growth of the film depends on the surface reactions of precursors and the reactions in the growing film, i.e., in-film reactions, which influences the film structure and properties. The in-film reactions also take place after the growth, i.e., post-growth annealing. So, the reactions should be properly controlled throughout the growth and annealing for the high-quality film formation. Here, the growth kinetics and related reactions are presented for device-grade hydrogenated amorphous silicon (a-Si:H) films.</p>

Journal

References(23)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top