Development of high-speed and high-accurate manufacturing of gallium nitride

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  • 単結晶窒化ガリウム（GaN）基板の高速高精度加工法の開発
  • 単結晶窒化ガリウム（GaN）基板の高速高精度加工法の開発 ―紫外線援用テープ研削法の提案―
  • タンケッショウ チッカ ガリウム(GaN)キバン ノ コウソク コウセイド カコウホウ ノ カイハツ : シガイセン エンヨウ テープ ケンサクホウ ノ テイアン
  • Suggestion of UV assist tape grinding method
  • —紫外線援用テープ研削法の提案—

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Abstract

<p>Single-crystal gallium nitride (GaN) has been expected to be applicable for power devices with low power loss. However, GaN materials show high hardness, high chemical stability, and brittleness, and are therefore difficult to process with conventional silicon substrate methods. This study was performed to improve the processing efficiency by oxidizing the Ga surface of GaN material using hydroxyl (OH) radicals generated by ultraviolet (UV) irradiation of hydrogen peroxide (HP) solution. Furthermore, we developed a UV-assisted tape grinding method that can perform oxidization and removal continuously. The results indicated that the developed processing method improved the processing speed by more than sixfold compared to the standard processing method.</p>

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