Improvements in optoelectrical properties of GaAsN by controlling step density during chemical beam epitaxy growth
書誌事項
- タイトル別名
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- Special issue: Solid state devices and materials
- Special issue Solid state devices and materials
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<jats:p> Improvements in optoelectrical properties of GaAsN are demonstrated by chemical beam epitaxy (CBE) growth on high-step-density GaAs substrates. The step density at the growing surface is controlled using 2, 4, and 10° off GaAs(001) wafers as substrates. The number of carrier scattering centers induced by N (<jats:italic>SC</jats:italic> <jats:sub>N</jats:sub>) in the grown GaAsN films is quantitatively evaluated from the temperature dependence of hole mobility and used as an indicator of film quality. In previous studies, <jats:italic>SC</jats:italic> <jats:sub>N</jats:sub> increased with increasing N composition independently of the growth technique used. By CBE with high-step-density substrates, the reduction in <jats:italic>SC</jats:italic> <jats:sub>N</jats:sub> is achieved. This method also improves the emission intensity of cathode luminescence. </jats:p>
収録刊行物
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 49 (4), 04DP08-, 2010-04
Tokyo : The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520009407683110784
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- NII論文ID
- 40017085352
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- NII書誌ID
- AA12295836
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- ISSN
- 00214922
- 13474065
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- NDL書誌ID
- 10654944
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
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