Experimental study on mobility in (110)-oriented ultrathin-body silicon-on-insulator n-type metal oxide semiconductor field-effect transistor with single and double-gate operations

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Experimental study on mobility in 110 oriented ultrathin body silicon on insulator n type metal oxide semiconductor field effect transistor with single and double gate operations

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (9A), 5686-5690, 2007-09

Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics