Enhancement-Mode LaLuO₃-AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation
Bibliographic Information
- Other Title
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- Special Issue : Recent Advances in Nitride Semiconductors
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Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 52 (8), 2013-08
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520009408472997248
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- NII Article ID
- 40019759234
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
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- NDL BIB ID
- 024790615
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
