Extremely low on-resistance and high breakdown voltage observed in vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates
Bibliographic Information
- Other Title
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- Extremely low on resistance and high breakdown voltage observed in vertical GaN Schottky barrier diodes with high mobility drift layers on low dislocation density GaN substrates
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Journal
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- Applied physics express : APEX
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Applied physics express : APEX 3 (8), 2010-08
Tokyo : Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520010380601694848
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- NII Article ID
- 10026586296
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- NII Book ID
- AA12295133
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- ISSN
- 18820778
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- NDL BIB ID
- 10793587
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
