Mechanisms of reduction in hole concentration in Al-implanted p-type 6H-SiC by 1 MeV electron irradiation
Bibliographic Information
- Other Title
-
- Mechanisms of reduction in hole concentration in Al implanted p type 6H SiC by 1 MeV electron irradiation
Search this article
Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
-
- Japanese journal of applied physics : JJAP
-
Japanese journal of applied physics : JJAP 47 (7), 5355-5357, 2008-07
Tokyo : The Japan Society of Applied Physics
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1520290882376354048
-
- NII Article ID
- 40016161753
-
- NII Book ID
- AA12295836
-
- ISSN
- 00214922
- 13474065
-
- NDL BIB ID
- 9585230
-
- Text Lang
- en
-
- NDL Source Classification
-
- ZM35(科学技術--物理学)
-
- Data Source
-
- NDL
- Crossref
- CiNii Articles