Effect of low growth rate in chemical beam epitaxy on carrier mobility and lifetime of p-GaAsN films

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  • Effect of low growth rate in chemical beam epitaxy on carrier mobility and lifetime of p GaAsN films
  • Special issue: Dry process
  • Special issue Dry process

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Abstract

<jats:p> Decreasing the growth rate in chemical beam epitaxy (CBE) is effective to improve the hole mobility and minority-carrier lifetime in p-GaAsN films. The hole mobility increased from 120 to 150 cm<jats:sup>2</jats:sup> V<jats:sup>-1</jats:sup> s<jats:sup>-1</jats:sup> for the N composition of 0.6%. The minority-carrier lifetime improved from 3.2×10<jats:sup>-1</jats:sup> ([N] = 0.6%) to 9.0×10<jats:sup>-1</jats:sup> ns ([N] = 0.8%) despite the higher N composition. N-related scattering centers are indicated to be the dominant scattering centers at approximately room temperature. Controlling the growth rate is considered to be effective to reduce the amount of N-related scattering centers and nonradiative recombination centers. </jats:p>

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