A 65nm complementary metal-oxide-semiconductor 400ns measurement delay negative-bias-temperature-instability recovery sensor with minimum assist circuit
Bibliographic Information
- Other Title
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- A 65nm complementary metal oxide semiconductor 400ns measurement delay negative bias temperature instability recovery sensor with minimum assist circuit
- Special issue: Solid state devices and materials
- Special issue Solid state devices and materials
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Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 50 (4), 2011-04
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520290883195273728
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- NII Article ID
- 40018800969
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
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- NDL BIB ID
- 11076397
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
