A New 600V Punch Through-Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p-Well Voltage Detection
Bibliographic Information
- Other Title
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- New 600V Punch Through Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p Well Voltage Detection
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Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
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Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45 (10A), 7587-7591, 2006-10
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1520290883323831424
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- NII Article ID
- 40007462466
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- NII Book ID
- AA10457675
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- ISSN
- 00214922
- 13474065
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- NDL BIB ID
- 8086462
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- Crossref
- CiNii Articles