Surface chemistry of preferentially (111)- and (220)-crystal-oriented microcrystalline silicon films by radio-frequency plasma-enhanced chemical vapor deposition
Bibliographic Information
- Other Title
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- Surface chemistry of preferentially 111 and 220 crystal oriented microcrystalline silicon films by radio frequency plasma enhanced chemical vapor deposition
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Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 49 (8), 2010-08
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520572357187548032
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- NII Article ID
- 40017253772
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
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- NDL BIB ID
- 10793522
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
