Performance of GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Regrown n⁺-Source/Drain on a Selectively Etched GaN
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Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 52 (6), 2013-06
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520572357388293120
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- NII Article ID
- 40019678210
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
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- NDL BIB ID
- 024644515
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
