Threshold voltage instability induced by plasma process damage in advanced metal-oxide-semiconductor field-effect transistors
Bibliographic Information
- Other Title
-
- Threshold voltage instability induced by plasma process damage in advanced metal oxide semiconductor field effect transistors
- Special issue: Dry process
- Special issue Dry process
Search this article
Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
-
- Japanese journal of applied physics : JJAP
-
Japanese journal of applied physics : JJAP 49 (8), 2010-08
Tokyo : The Japan Society of Applied Physics
- Tweet
Details 詳細情報について
-
- CRID
- 1520572358344847360
-
- NII Article ID
- 40017253832
-
- NII Book ID
- AA12295836
-
- ISSN
- 00214922
-
- NDL BIB ID
- 10793773
-
- Text Lang
- en
-
- NDL Source Classification
-
- ZM35(科学技術--物理学)
-
- Data Source
-
- NDL
- CiNii Articles
