High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate
Bibliographic Information
- Other Title
-
- High temperature operation of normally off mode AlGaN GaN heterostructure field effect transistors with p GaN gate
- Special issue: Advanced plasma science and its applications for nitrides and nanomaterials
- Special issue Advanced plasma science and its applications for nitrides and nanomaterials
Search this article
Journal
-
- Japanese journal of applied physics : JJAP
-
Japanese journal of applied physics : JJAP 50 (1), 2011-01
Tokyo : The Japan Society of Applied Physics
- Tweet
Details 詳細情報について
-
- CRID
- 1520572358414671744
-
- NII Article ID
- 40017446878
-
- NII Book ID
- AA12295836
-
- ISSN
- 00214922
-
- NDL BIB ID
- 10947871
-
- Text Lang
- en
-
- NDL Source Classification
-
- ZM35(科学技術--物理学)
-
- Data Source
-
- NDL
- CiNii Articles